Base resistance controlled thyristor with integrated single-polarity gate control
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Aug 31, 1993
Grant Date -
N/A
app pub date -
Dec 14, 1992
filing date -
Dec 14, 1992
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A base resistance controlled thyristor with integrated single-polarity gate control includes a thyristor having an anode region, a first base region, a second base region on the first base region and a cathode region contacting the second base region and defining a P-N junction therewith. For providing gated turn-off control, a depletion-mode field effect transistor is provided on the second base region and is separated therefrom by an insulating region. In particular, an insulating region, such as a buried dielectric layer, is provided on the second base region and the depletion-mode field effect transistor is formed thereon. The depletion-mode field effect transistor is electrically connected between the cathode contact and the second base region and provides a direct electrical connection therebetween in response to a turn-off bias signal which is preferably a zero or near zero bias. The insulating region, on the other hand, prevents direct electrical conduction between the second base region and the source of the depletion-mode transistor. The insulating region can be formed as a buried dielectric layer during processing and is preferably selected from the group consisting of SiO.sub.2, Si.sub.3 N.sub.4, Al.sub.2 O.sub.3 and MgAl.sub.2 O.sub. 4.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully