Substrate heating method utilizing heating element control to achieve horizontal temperature gradient
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United States of America Patent
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Aug 24, 1993
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N/A
app pub date -
Nov 14, 1991
filing date -
Nov 14, 1990
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Abstract
A heat-treating method comprising preparing a plurality of wafers parallel to one another in a process tube while keeping their surfaces to be treated substantially horizontal, arranging plural MoSi.sub.2 wire heaters along the longitudinal axis of the process tube so as to be placed around the process tube, adjusting the amount of current supplied to the heaters to form on the treated surface of each of the wafers temperature gradient extending from one side of the outer circumferential rim of each of the wafers to the other side thereof, and rotating the wafers in their surfaces.
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