MOS transistor with high threshold voltage
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Aug 24, 1993
Grant Date -
N/A
app pub date -
May 15, 1991
filing date -
May 17, 1990
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
Disclosed is a MOS transistor with high threshold voltage comprising, in a semiconductor substrate with a first type of conductivity, surface drain and source regions with the second type of conductivity having a high doping concentration, separated by a thick oxide zone in which there is formed, in the substrate, an overdoped region with the first type of conductivity. Each of the drain and source regions is inserted in a well with the second type of conductivity, having a low doping concentration, formed in the substrate.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully