Lightly doped drain MOSFET with reduced on-resistance
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United States of America Patent
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Aug 17, 1993
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N/A
app pub date -
Jun 24, 1988
filing date -
Jun 24, 1988
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Expired
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Abstract
Construction method and apparatus for lightly doped drain MOSFET that has low or minimum drift on-state resistance and maintains high voltage blocking in the off-state. Temperature sensitivity of the electrical properties of the MOSFET are also reduced relative to MOSFETs produced by processes such as SIPOS. Voltage level shifting of p-channel and n-channel MOSFETs, produced according to the invention, relative to another voltage level is easily accomplished.
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