Method for forming contacts to p-type HgCdTe semiconductor material using lead and tin
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United States of America Patent
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Jul 20, 1993
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N/A
app pub date -
Dec 23, 1991
filing date -
Dec 23, 1991
priority date (Note) -
Expired
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Abstract
A method for making an adhesive ohmic contact to a p-type semiconductor metal substrate or layer (10) comprises tin and lead. The contact preferably includes a tin/lead film (24) approximately 2000 .ANG. in thickness. The p-type semiconductor compound contains mercury and, while described in conjunction with Hg.sub.1-x Cd.sub.x Te, other elements exhibiting group II and group VI chemical behavior and properties may be used A cap layer (30) is deposited over film (24), followed by insulating layer (32). Via (34) is then formed and, to complete contact (50), a metal (36) is deposited inside via (34).
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