Plasma ashing method and apparatus therefor
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United States of America Patent
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Jul 6, 1993
Grant Date -
N/A
app pub date -
Jan 9, 1990
filing date -
Jan 10, 1989
priority date (Note) -
Expired
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Abstract
In a method for plasma ashing a resist film coated on a substrate, the temperature of the substrate is controlled initially at temperatures below that at which explosion of the resist film occurs until a surface portion of a resist film has been removed. Thereafter, the substrate temperature is increased to remove the remaining portions of the resist film. An apparatus for conducting the method includes a plurality of supports, which may be movably disposed within a vacuum treatment chamber for moving the substrate away from a source of heat and for moving the substrate into contact with the heating source.
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