Diamond n-type semiconductor diamond p-n junction diode
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jun 29, 1993
Issued Date -
N/A
app pub date -
Feb 7, 1992
filing date -
Nov 22, 1989
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A diamond n-type semiconductor including a substrate and a phosphorus element-doped diamond thin film disposed on the substrate. The diamond thin film is deposited by vaporizing a solution comprising a liquid organic compound as the diamond material with diphosphorus pentoxide (P.sub.2 O.sub.5) dissolved therein, and subjecting the resultant gas to a hot filament CVD method.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully