Method of manufacturing single-crystal silicon
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United States of America Patent
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Jun 29, 1993
Grant Date -
N/A
app pub date -
Apr 12, 1991
filing date -
Apr 27, 1990
priority date (Note) -
Expired
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Abstract
A single crystal silicon is prepared by providing a silicon melt reservoir formed of an induction coil coated on its internal surfaces with a high melting insulating material which is subjected to an electromagnetic field which heats silicon placed in said melt reservoir, melting silicon in the melt reservoir by the application of the electromagnetic field and simultaneously depositing a scull layer of silicon on the inner surface of said reservoir, and pulling up a single crystal silicon rod from the silicon melt in the melt reservoir.
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