Method for synthesis and processing of continuous monocrystalline diamond thin films
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United States of America Patent
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Jun 22, 1993
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app pub date -
Apr 8, 1991
filing date -
Apr 8, 1991
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Abstract
Disclosed is a method for the development of diamond thin films on a non-diamond substrate. The method comprises implanting carbon ions in a lattice-plane matched or lattice matched substrate. The implanted region of the substrate is then annealed to produce a diamond thin film on the non-diamond substrate. Also disclosed are the diamond thin films on non-diamond lattice-plane matched substrates produced by this method. Preferred substrates are lattice and plane matched to diamond such as copper, a preferred implanting method is ion implantation, and a preferred annealing method is pulsed laser annealing.
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