Chemical vapor infiltration method utilizing substantially diffusive conditions
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United States of America Patent
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Jun 8, 1993
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N/A
app pub date -
Dec 16, 1991
filing date -
Dec 18, 1990
priority date (Note) -
Expired
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Abstract
A porous substrate is placed inside an enclosure and a gas flow is injected into the enclosure under predetermined conditions of temperature and pressure to form a solid deposit within the accessible pores inside the substrate. A wall that is permeable to the gas flow is interposed on the path of the flow between its inlet into the enclosure and the substrate, the wall not being in contact with the substrate, thereby forming around the substrate a region which is free from strong turbulence so that infiltration is performed essentially under diffusion conditions, thereby minimizing the deposition gradient within the volume of the substrate.
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