Method for making uniform the thickness of a Si single crystal thin film
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United States of America Patent
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May 25, 1993
Grant Date -
N/A
app pub date -
Jul 29, 1992
filing date -
Jul 31, 1991
priority date (Note) -
Expired
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Abstract
A Si single crystal thin film is classified according to the thickness into several areas such that the areas where the thin film is thicker is made oxide layer-free and the areas where the thin film is thinner is covered with oxide layer. Then, oxidation is conducted so that the thicker the thin film the lower the Si interface becomes, utilizing the different growth rates of the oxide layer in these areas. The thin film surface with a resulting staircase configuration is then leveled by the subsequent polishing treatment. In other method, oxide layer is formed in such way that the areas with a thicker thin film thickness will have a thinner oxide layer and the areas with a thinner thin film thickness will have a thicker oxide layer, and oxidation is conducted such that the thicker the thin film the lower the Si interface becomes.
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