Dry etching method
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Apr 13, 1993
Grant Date -
N/A
app pub date -
Jul 17, 1990
filing date -
Nov 18, 1988
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
The present invention relates to a dry etching method in which the type of reactive gas used is improved and the selectively between a workpiece being etched and a substance below the workpiece is increased. A gas comprising a fluoride gas and a compound gas containing hydrogen as a constituent element is used as the reactive gas. According to the present invention, the etching selectivity between a workpiece being etched and a substance below the workpiece is greatly increased, and etching of the substance below the workpiece can be prevented. The present invention is applicable to a semiconductor structure having a silicon oxide film below a silicon nitride film.
First Claim
Family
International Classification(s)
- [Classification Symbol]
- [Patents Count]
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully