Anisotropic etch method
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Apr 13, 1993
Issued Date -
N/A
app pub date -
Aug 27, 1990
filing date -
Jul 20, 1989
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A method to anisotropically etch an oxide/silicide/poly sandwich structure on a silicon wafer substrate in situ, that is, using a single parallel plate plasma reactor chamber and a single inert cathode, with a variable gap between cathode and anode. This method has an oxide etch step that utilizes C.sub.2 F.sub.6, CF.sub.4, CHF.sub.3 and an inert carrier gas as the etching atmosphere. The fully etched sandwich structure has a vertical profile at or near 90.degree. from horizontal, with no bowing or notching.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully