Susceptor for vapor-growth deposition
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Apr 6, 1993
Issued Date -
N/A
app pub date -
Mar 14, 1991
filing date -
Feb 17, 1986
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
The susceptor according to the present invention comprises a main body in the shape of a trapezoidal plate, and which has three circular depressions formed in its surface. The main body is made of silicon carbide having a bulk density of 3.00 g/cm.sup.3 or more. At least 70% of the surface region of the main body is made of crystal particles having a diameter of 5 .mu.m or more. The main body has a thickness of, for example, 700 .mu.m. Six susceptors are attached to a hexagonal upper plate which is fastened to a shaft, and also to a hexagonal lower plate, thereby forming a barrel. Silicon wafers are placed in the circular depressions, so that single-crystal layers may be epitaxially formed on the wafers.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully