Method of producing flat ECR layer in microwave plasma device and apparatus therefor
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
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Mar 30, 1993
Grant Date -
N/A
app pub date -
Jul 12, 1991
filing date -
Jul 12, 1991
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A microwave plasma generating device including a plasma chamber for generating plasma, a reaction chamber having a specimen stage on which a specimen is treated with the plasma, a gas supply for supplying gas to the plasma generating chamber, a microwave generator for generating a microwave electric field in the plasma and reaction chambers and a plurality of axially spaced apart and concentric electromagnet coils for generating a magnetic field in the plasma and reaction chambers. The microwave electric field and the magnetic field have perpendicularly crossing components and the magnetic field has a strength which decreases in the axial direction from the plasma chamber towards the reaction chamber with constant strength magnetic flux density lines lying in planes which are substantially parallel to each other and perpendicular to the axial direction. The magnetic field produces a flat ECR condition wherein the ECR layer extends perpendicularly to the axial direction over at least 50% of the width of the plasma chamber. In a method of using this device, upper and lower electromagnets produce magnetic fields such that the magnetic field produced by the lower electromagnet is weaker than that produced by the first electromagnet. For instance, the upper electromagnet can be supplied a higher amount of current than the lower electromagnet. Alternatively, the upper and lower electromagnets can be supplied the same amount of current but the lower electromagnet can be larger in diameter than the first electromagnet. This allows the ECR layer to be made thicker in the axial direction than an ECR layer produced by a conventional plasma generating device.
First Claim
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Family

- 15 United States
- 10 France
- 8 Japan
- 7 China
- 5 Korea
- 2 Other
Patent Owner(s)
Patent Owner | Address | |
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LAM RESEARCH CORPORATION | 4650 CUSHING PARKWAY FREMONT CA 94538-6470 |
International Classification(s)

- 1991 Application Filing Year
- H05H Class
- 46 Applications Filed
- 14 Patents Issued To-Date
- 30.44 % Issued To-Date
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
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Chen, Ching-Hwa | Milpitas, CA | 31 | 2482 |
# of filed Patents : 31 Total Citations : 2482 | |||
Inoue, Takashi | Tokyo, JP | 662 | 7614 |
# of filed Patents : 662 Total Citations : 7614 | |||
Yin, Gerald | Cupertino, CA | 30 | 2373 |
# of filed Patents : 30 Total Citations : 2373 |
Cited Art Landscape
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Patent Citation Ranking
- 91 Citation Count
- H05H Class
- 90.91 % this patent is cited more than
- 32 Age
Forward Cite Landscape
- No Forward Cites to Display

Maintenance Fees
Fee | Large entity fee | small entity fee | micro entity fee | due date |
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Fee | Large entity fee | small entity fee | micro entity fee |
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Surcharge after expiration - Late payment is unavoidable | $700.00 | $350.00 | $175.00 |
Surcharge after expiration - Late payment is unintentional | $1,640.00 | $820.00 | $410.00 |
Full Text

Legal Events
Date | Code | Event | Description |
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Mar 02, 2015 | STCH | INFORMATION ON STATUS: PATENT DISCONTINUATION | free format text: PATENT EXPIRED DUE TO NONPAYMENT OF MAINTENANCE FEES UNDER 37 CFR 1.362 |
Feb 01, 2015 | FP | LAPSED DUE TO FAILURE TO PAY MAINTENANCE FEE | Effective Date: Feb 01, 2015 |
Feb 01, 2015 | LAPS | LAPSE FOR FAILURE TO PAY MAINTENANCE FEES | |
Sep 12, 2014 | REMI | MAINTENANCE FEE REMINDER MAILED | |
Feb 01, 2011 | I | Issuance | |
Aug 24, 2010 | F | Filing | |
Apr 14, 2010 | AS | ASSIGNMENT | free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:BAI, YUNG-HSIANG;LIAO, YU-FEN;CHEN, YI-JIN;AND OTHERS;REEL/FRAME:024928/0722 Owner name: EVERLIGHT USA, INC., NORTH CAROLINA Effective Date: Apr 14, 2010 |
Sep 03, 2009 | PD | Priority Date |

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