Filamentless ion source for thin film processing and surface modification
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United States of America Patent
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Mar 30, 1993
Grant Date -
N/A
app pub date -
May 31, 1991
filing date -
Mar 6, 1989
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Abstract
A filamentless (without a heated cathode) ion source for thin film processing and surface modification. The ion source comprises a plasma chamber which includes a wall defining an evacuable chamber having a first end and a second end, with a dielectric member extending across the first end of the evacuable chamber. A gas inlet admits a plasma forming gas into the chamber. An RF emitter is positioned adjacent to the dielectric member for inductively generating a plasma in the gas in the plasma chamber during use of the ion source. A control grid structure is provided for extracting ions from plasma in the plasma chamber, and include a first grid connected to a positive voltage source and a second grid connected to a negative voltage source, to produce an acceleration field for accelerating ions towards and through the second grid of the control grid structure. An ion beam processing apparatus and an ion beam neutralizer incorporating such an ion source are also described.
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