Semiconductor element and manufacture thereof
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United States of America Patent
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Mar 30, 1993
Grant Date -
N/A
app pub date -
Apr 22, 1988
filing date -
May 1, 1987
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A method of fabricating a polycide semiconductor element in which a lift-off mask is formed on a first region of a layer of polysilicon. A first dopant is implanted into second regions of the polysilicon which are adjacent the first region, the first region being masked from implantation by the lift-off mask. A layer of silicide is forced over the implanted regions and the lift-off mask and then the lift-off mask and the respective part of the layer of silicide which is deposited thereover are removed thereby to expose the first region. The method may be used to fabricate a resistive device in a polycide semiconductor element. There is also disclosed a semiconductor element, e.g. a resistive device, made by the method.
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