Method and device for outside plasma deposition of hydroxyl ion-free silica
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United States of America Patent
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Mar 16, 1993
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N/A
app pub date -
Jun 5, 1990
filing date -
Jun 5, 1989
priority date (Note) -
Expired
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Abstract
Method of outside plasma deposition onto a rod (17,22) of silica substantially free from hydroxyl ions, possibly doped to change its refractive index, by reaction with oxygen of a silicon compound and possibly of doping compounds, in the presence of a gas plasma raised to a very high temperature (16) by induction with the help of a high frequency generator (15). The rod on which the silica deposit is made is kept in a sealed chamber (19) separated from the surrounding atmosphere and supplied by a pipe (20) with atmospheric air that is successively passed through a filter (31), a compressor (32) a cooling means (33), a condensation water drain (35) and a final desiccation by adsorption (36, 38). A device for implementing the method is also claimed.
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