Method of producing a substrate having semiconductor-on-insulator structure with gettering sites
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United States of America Patent
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Mar 16, 1993
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N/A
app pub date -
Aug 2, 1991
filing date -
Jul 28, 1988
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Abstract
A substrate has a semiconductor-on-insulator structure. The substrate has a base substrate, an insulator layer provided on the base substrate, an active substrate provided on the insulator layer and having gettering sites, and an active layer provided on the active substrate and made of a semiconductor. The gettering sites under the active layer eliminate crystal defects and impurities generated in the active layer during the semiconductor device production in which elements are formed in the active layer.
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