Process for producing a silicized silicon carbide dipping former
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United States of America Patent
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Mar 16, 1993
Grant Date -
N/A
app pub date -
Jan 30, 1990
filing date -
Feb 1, 1989
priority date (Note) -
Expired
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Abstract
A process for making a ceramic dipping former from silicized silicon carbide by making an absorbent negative mold of the ceramic dipping former containing preparing a suspension containing at least two particle size fractions of silicon carbide, a binder and water and pouring the suspension into the absorbent negative mold, drying the suspension in the absorbent negative mold, opening the absorbent negative mold and removing a silicon carbide green body, and further drying and silicizing the green body in a drying oven at a temperature between approximately 1400.degree. C. to 1750.degree. C. under reduced pressure.
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