Crystallized polycrystalline semiconductor device
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United States of America Patent
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Mar 9, 1993
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N/A
app pub date -
Sep 24, 1991
filing date -
Sep 25, 1990
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Abstract
A polycrystalline semiconductor device and a method of manufacturing the device are disclosed. An amorphous semiconductor film is deposited on a glass substrate and given thermal treatment at a crystallization temperature of 600.degree. C. or lower to form a polycrystalline photoconductive strucutre. The substrate is made from a material having the property of contracting at a percentage different than the semiconductor film by 10% or less, the contraction being caused by the thermal treatment.
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