Passivation oxide conversion wherein an anodically grown oxide is converted to the sulfide
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United States of America Patent
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Feb 23, 1993
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N/A
app pub date -
Nov 26, 1990
filing date -
Jul 27, 1988
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Abstract
A method of passivation of Hg.sub.1-x Cd.sub.x Te and similar semiconductors by surface oxidation (such as anodic) followed by chemical conversion of the oxide to either sulfide or selenide or a combination of both is disclosed. Preferred embodiments provide sulfide conversion by immersion of the oxide coated Hg.sub.1-x Cd.sub.x Te in a sodium sulfide solution in water with optional ethylene glycol and the selenidization by immersion in a solution of sodium selenide plus sodium hydroxide in water and ethylene glycol. Also, infrared detectors incorporating such sulfide and selenide passivated Hg.sub.1-x Cd.sub.x Te are disclosed.
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