Dynamic random access memory and method for equalizing sense amplifier drive signal lines
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United States of America Patent
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Jan 5, 1993
Issued Date -
N/A
app pub date -
Oct 19, 1988
filing date -
Oct 30, 1985
priority date (Note) -
Expired
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Abstract
In a dynamic random access memory (DRAM) having a sense amplifier of complementary metal oxide semiconductor (CMOS) type, switching transistors are provided for setting the bit line potential and the potential of the sense amplifier driving signal line at the same potential, namely, a half of the voltage applied to the bit line in writing 'H', during the bit line equalizing period.
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