Single event upset hardening circuits, devices and methods

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United States of America Patent

PATENT NO 5175605
SERIAL NO

07474608

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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The present invention provides a unique circuit and layout methods for improving upon series redundant circuits. A substitution device, comprising a pair of series connected N or P FETs for respective single FETs, can be further hardened or enhanced against cosmic rays, particles, etc. by spacing the P FETs a predetermined distance apart so that an ion or other particle cannot strike or affect both channels simultaneously, thus avoiding upset. When these devices are placed in cells (i.e., ASIC) in logic or the like circuits, the predetermined spacing is related to cell height. Also, alignment of the gates of the substitution device on a common axis minimizes the window of a satellite through which a particle could effectively strike the common gate axis possibly to upset both gates.

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Patent Owner(s)

Patent OwnerAddress
NEWPORT FAB LLC DBA JAZZ SEMICONDUCTOR4321 JAMBOREE ROAD NEWPORT BEACH CA 92660

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Heimbigner, Gary L Anaheim, CA 10 233
Pavlu, James A Huntington Beach, CA 1 35

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