High speed magneto-resistive random access memory
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United States of America Patent
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Dec 22, 1992
Grant Date -
N/A
app pub date -
Jun 28, 1990
filing date -
Jun 28, 1990
priority date (Note) -
Expired
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Abstract
A high speed read MRAM memory element is configured from a sandwich of magnetizable, ferromagnetic films surrounding a magento-resistive film which may be ferromagnetic or not. One outer ferromagnetic film has a higher coercive force than the other and therefore remains magnetized in one sense while the other may be switched in sense by a switching magnetic field. The magneto-resistive film is therefore sensitive to the amplitude of the resultant field between the outer ferromagnetic films and may be constructed of a high resistivity, high magneto-resistive material capable of higher sensing currents. This permits higher read voltages and therefore faster read operations. Alternate embodiments with perpendicular anisotropy, and in-plane anisotropy are shown, including an embodiment which uses high permeability guides to direct the closing flux path through the magneto-resistive material. High density, high speed, radiation hard, memory matrices may be constructed from these memory elements.
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