Semiconductor light emitting device
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United States of America Patent
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-
Dec 22, 1992
Grant Date -
N/A
app pub date -
Jul 26, 1991
filing date -
Jan 21, 1991
priority date (Note) -
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Abstract
A semiconductor light emitting device has an epitaxial layer of which lattice match with a substrate crystal is made. The epitaxial layer is formed of mixed crystals of a plurality of Group III-V compound semiconductors on the substrate formed of a crystal of ZnO. More particularly, the expitaxial layer is formed of: Al.sub.x Ga.sub.1-X-Y In.sub.Y N (0.ltoreq.X<1, 0
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