Semi-insulating INP single crystals, semiconductor devices having substrates of the crystals and processes for producing the same

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United States of America Patent

PATENT NO 5173127
SERIAL NO

07661616

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Abstract

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A semi-insulating InP single crystal, semiconductor device with a substrate of crystal and processes of producing the same are disclosed. The crystal is derived from an undoped InP single crystal intermediate. The intermediate has a concentration of all native Fe, Co and Cr of 0.05 ppmw or less. The crystal has a resistivity of 1.times.10.sup.6 .OMEGA..multidot.cm or more and a mobility of above 3,000 cm.sup.2 /V.multidot.s both at 300 K. A process of producing the crystal includes a step of heat-treating the intermediate under 6 kg/cm.sup.2 of phosphorus vapor pressure. The produced semiconductor device is a MIS device operating in essentially the same high-speed manner as a HEMT.

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Patent Owner(s)

Patent OwnerAddress
JAPAN ENERGY CORPORATIONMINATO-KU TOKYO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kainosho, Keiji Toda, JP 6 24
Oda, Osamu Toda, JP 64 938
Shimakura, Haruhito Toda, JP 6 43

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