Method for forming a doped ZnSe single crystal
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United States of America Patent
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Dec 8, 1992
Issued Date -
N/A
app pub date -
Apr 15, 1991
filing date -
Mar 16, 1988
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Abstract
A method of forming a ZnSe single crystal. The method includes placing a piece of ZnSe polycrystal in a sealed reactor tube with its atmosphere formed of certain gases. The reactor tube is moved through different temperature zones to convert the polycrystal to a single crystal. The single crystal thus formed is cut to produce a single crystal chip or wafer. An impurity is then implanted in the chip or wafer. Lastly the chip or wafer is heated to diffuse the impurity throughout the chip or wafer.
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