Method of manufacturing step cut type insulated gate SIT having low-resistance electrode
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United States of America Patent
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Dec 8, 1992
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N/A
app pub date -
Aug 20, 1991
filing date -
Feb 28, 1989
priority date (Note) -
Expired
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Abstract
This invention provides a step cut type insulated gate static induction tsistor having a first main electrode formed in one major surface of a semiconductor substrate, a second main electrode formed in a bottom portion of a U-shaped groove formed in one major surface of a semiconductor substrate, a control electrode formed on a side wall of the U-shaped groove and consisting of a thin insulating film and a polysilicon layer, and a low-resistance electrode of a refractory metal layer or a refractory metal silicide layer formed in at least part of the side wall of the polysilicon layer of the control electrode.
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