Method of determining end of cleaning of semiconductor manufacturing apparatus
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United States of America Patent
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Dec 8, 1992
Issued Date -
N/A
app pub date -
Dec 7, 1990
filing date -
Mar 31, 1987
priority date (Note) -
Expired
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Abstract
In a method for determining an end of cleaning of a semiconductor manufacturing apparatus according to the invention, when the interior of a semiconductor substrate process chamber of the semiconductor manufacturing apparatus is cleaned by dry etching using plasma discharge, a constant current or voltage is supplied from a high-frequency power source to discharge electrodes during plasma discharge, an impedance between the electrodes or a temperature in the process chamber is monitored, a time point at which the impedance or temperature is abruptly changed is detected, and this time point of detection is determined to be an end of cleaning.
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