Nonvolatile differential memory device and method

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United States of America Patent

PATENT NO 5168464
SERIAL NO

07442809

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Abstract

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A nonvolatile memory device comprising first and second transistors connected between respective first and second terminals and a reference potential terminal, the transistors having first and second floating gates, respectively, for storing complementary charges. The device further comprises first and second input lines capacitively coupled to the gates, and means for providing a biasing voltage slightly in excess of the threshold voltage of the transistors to the input lines.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 300-78

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Stanchak, Carl M Colorado Springs, CO 9 82
Turi, Raymond A Colorado Springs, CO 39 2510
Yakura, James P Colorado Springs, CO 12 203

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