Method of making high density semiconductor structure
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United States of America Patent
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Dec 1, 1992
Issued Date -
N/A
app pub date -
Dec 21, 1990
filing date -
Nov 29, 1988
priority date (Note) -
Expired
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Abstract
A method of forming a high density semiconductor structure including one or more buried metal layers. One or more metal layers may be formed on a first semiconductor substrate, with the metal layer or layers being insulated from one another and from the substrate. One or more metal layers may be formed on the surface of a second substrate which may or may not be a semiconductor substrate. The topmost metal layers, either or both of which may have an insulating layer thereon, are placed in contact and heated in an oxidizing ambient atmosphere to form a bond therebetween. One or more vias connect the buried metal layers to the active devices in the substrates. The buried metal layers may form buried power and ground planes and buried metallization patterns for device interconnection.
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