Plasma etching method and apparatus
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United States of America Patent
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-
Dec 1, 1992
Grant Date -
N/A
app pub date -
Sep 6, 1990
filing date -
Sep 6, 1990
priority date (Note) -
Expired
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Abstract
Method and apparatus for monitoring and maintaining the geometry of plasma in a plasma chamber is disclosed wherein the plasma density and plasma temperature in the chamber are monitored to calculate an initial sample dc voltage which is applied to the sample or first probe in or adjacent to the temperature. The current to the sample or first probe is then measured, a new sample voltage for the sample or first probe is then calculated and applied and these latter steps of measuring, calculating and applying are repeated. Different wire and flat probe structures and positions are disclosed.
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