Low contact resistance process
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United States of America Patent
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Nov 24, 1992
Grant Date -
N/A
app pub date -
Dec 14, 1990
filing date -
Dec 14, 1990
priority date (Note) -
Expired
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Abstract
A process to reduce M1/N+ contact resistance includes a low temperature anneal step, after the aluminum interconnect is alloyed at 400.degree. C. During the low temperature anneal step, the temperature of the furnace tube is lowered from 400.degree. C. to 250.degree. C. over a period of two hours, after which the integrated circuit is annealed under nitrogen for a further period of one hour. Alternately, the low temperature anneal is performed in an oven filled with nitrogen for a period of two hours at 250.degree. C.
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