Fabrication of oxynitride frontside microstructures
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United States of America Patent
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Nov 17, 1992
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N/A
app pub date -
May 28, 1991
filing date -
Sep 30, 1988
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Abstract
Method for producing a low stress silicon oxynitride microstructure on a semiconductor substrate at temperatures not higher than 500.degree. C. The method is particularly adapted for forming integrated silicon sensors where the oxynitride microstructure is fabricated on a substrate under conditions which do not harm the integrated circuit electronics.
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