Circuit for dynamic isolation of integrated circuits

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United States of America Patent

PATENT NO 5159207
SERIAL NO

07618281

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Abstract

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A dynamic isolation circuit belonging to a monolithic integrated circuit comprising lateral transistors and vertical transistors. The lateral transistors are isolated by an isolating region connected to an isolating potential (V.sub.iso), these lateral transistors being connected up to voltages of a first polarity relative to a reference voltage (GND), the power terminal connected up to the rear face normally being at a potential (V.sub.out) of the first polarity relative to the reference voltage. This circuit comprises a sign-detector (D) for detecting the sign of the potential of the rear face relative to the reference voltage, at least one lateral transistor (S1) to connect the isolating potential to the reference potential when the potential of the rear face is of the first polarity relative to the reference potential, and at least one vertical transistor (S2) to connect the isolating potential to the potential of the rear face when the potential of the rear face is of the second polarity relative to the reference potential.

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Patent Owner(s)

Patent OwnerAddress
SGS-MICROELECTRONICS S A7 AVENUE GALLIENI GENTILLY 94250
SIEMENS AUTOMOTIVE S A AVENUE DU MIRAILBP 1149 31036 TOULOUSE CEDEX

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Pavlin, Antoine Aix En Provence, FR 27 255
Sicard, Thierry Fenouillet, FR 48 323
Simon, Marc Tournefeuille, FR 32 321

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