Complementary, isolated DMOS IC technology

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United States of America Patent

PATENT NO 5156989
SERIAL NO

07268839

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Abstract

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A process sequence that produces a plurality of pretransistor structures from which a variety of high voltage, isolated integrated circuits and low voltage integrated circuits are easily fabricated.

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Patent Owner(s)

Patent OwnerAddress
SILICONIX INCORPORATED A DE CORP2201 LAURELWOOD ROAD SANTA CLARA CA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Blanchard, Richard A Los Altos, CA 334 6868
Williams, Richard K Cupertino, CA 345 15460

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