HEMT device with doped active layer
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United States of America Patent
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Oct 6, 1992
Issued Date -
N/A
app pub date -
Feb 25, 1991
filing date -
Dec 25, 1987
priority date (Note) -
Expired
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Abstract
A high-mobility semiconductor device having GaAs/AlGaAs hetero junction of the present invention comprises a GaAs active layer and a GaAs contact layer, with a high-carrier concentration AlGaAs barrier layer interposed therebetween, so that the effective carrier concentration of the active layer can be increased and thus the thickness thereof can be reduced, resulting in an increase in the trans-conductance and improvement in the high frequency characteristics. Since the presence of the AlGaAs barrier layer enables selecting etching, such element characteristics as the plane uniformity and reproducibility can be improved.
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