Semiconductor-to-metal optical switch for power limitation in the infrared
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Sep 22, 1992
Grant Date -
N/A
app pub date -
Aug 21, 1991
filing date -
Aug 21, 1991
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A semiconductor-to-metal optical switch or device for power limitation in the infrared spectral region includes two thin semiconductor layers sandwiched between two transparent electrodes. An electrical voltage is applied across the two semiconductor layers to produce an active device for blocking incident light in the 8 to 12 .mu.m spectral region. The material composition and thickness of the two semiconductor layers are such that enough photo-excited electrons are generated in the first semiconductor layer so that the second semiconductor layer undergoes a rapid semiconductor-to-metal transition at a predetermined light intensity. The semiconductor layers remain transparent below the predetermined light intensity and the second layer will become metal-like at a light intensity above a threshold level. Upon becoming metal-like, the second semiconductor layer will block the incident light. The first semiconductor layer can be made from a material such as mercury cadium telluride and the second semiconductor layer can be made from a material such as germanium.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully