Low temperature crystallization and pattering of amorphous silicon films
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United States of America Patent
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Sep 15, 1992
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N/A
app pub date -
Aug 6, 1990
filing date -
Aug 6, 1990
priority date (Note) -
Expired
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Abstract
The 700.degree. C./4 min. rapid thermal anneal described in the prior art for converting amorphous Si to polycrystalline Si can be reduced to a temperature range of from 550.degree. C. to 650.degree. C. This is accomplished by depositing a very thin discontinuous film of a nucleating site forming material over the amorphous Si prior to rapid thermal anneal. Furthermore, by selectively depositing the material in a pattern, only that amorphous Si beneath the deposited pattern is caused to crystallize during annealing, while the remaining areas of amorphous Si remain in the amorphous state.
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