Semiconductor light emitting device having a superlattice buffer layer
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United States of America Patent
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Sep 8, 1992
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N/A
app pub date -
Dec 5, 1990
filing date -
Mar 29, 1988
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Expired
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Abstract
A buffer layer employed for an epitaxial growth includes two kinds of lattices of a superlattice of a lattice matching and a superlattice of a lattice mismatching or of a heterointerface so as to obtain the gas trap effect and the distortion removal effect, thereby improving the quality of the semiconductor device.
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