Closed cell transistor with built-in voltage clamp
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United States of America Patent
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Aug 4, 1992
Issued Date -
N/A
app pub date -
Oct 12, 1990
filing date -
Aug 30, 1989
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A power transistor takes advantage of the lower breakdown voltage capability of a spherical junction. A clamping region having a spherical shape is provided in the gater region of an enclosed transistor cell. The clamping region has a lower breakdown voltage than do the active portions of the transistor cell. Both a DMOSFET and an IGBT transistor may be provided with the clamping region. The clamping region is a zener diode in the case of the DMOSFET, and is a bipolar junction transistor in the case of the insulated gate bipolar transistor. The clamping region is preferably an island in the center of each cell of a closed cell structure.
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