Parallel transistor circuit with non-volatile function
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United States of America Patent
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Jul 28, 1992
Grant Date -
N/A
app pub date -
Apr 9, 1991
filing date -
Apr 13, 1990
priority date (Note) -
Expired
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Abstract
A parallel transistor circuit 10 with non-volatile function is provided on a single semiconductor body, comprising an enhancement-type MOS transistor 1 having a drain electrode 25a connected to a drain node 25c, a gate electrode 37a connected to a gate node 37c, and a source electrode 23a connected to a source node 23c; and a floating gate-type MOS transistor 3 having a drain electrode 25b connected to the drain node, a floating gate 33, a control gate electrode 37b connected to the gate node, and a source electrode 23b connected to the source node.
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