Bandgap voltage reference using bipolar parasitic transistors and MOSFET's in the current source
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United States of America Patent
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Jul 21, 1992
Grant Date -
N/A
app pub date -
Nov 17, 1989
filing date -
Nov 17, 1989
priority date (Note) -
Expired
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Abstract
In a CMOS bandgap reference circuit, the respective collectors of two lateral parasitic NPN transistors are connected to the two nodes of a current mirror. The emitter circuit of the first parasitic NPN transistor includes a resistor, whereby the base-emitter junction current densities of the parasitic NPN transistors are maintained at a preselected ratio. A second resistor common to the emitter circuit of both parasitic NPN transistors is provided, whereby .DELTA.V.sub.BE having a positive temperature coefficient and V.sub.BE of the second parasitic NPN transistor having a negative temperature coefficient cancel one another. The temperature independent voltage across the common resistor and the base-emitter junction of the second transistor is buffered by a unity gain amplifier. The output of the unity gain amplifier is used to drive the parasitic NPN transistors and also is furnished as the reference voltage.
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