Silicon on insulator semiconductor composition containing thin synthetic diamone films
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United States of America Patent
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Jul 21, 1992
Issued Date -
N/A
app pub date -
Aug 26, 1988
filing date -
Nov 16, 1987
priority date (Note) -
Expired
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Abstract
A process is provided for making a semiconductor element comprising a single-crystal layer of silicon on a diamond insulator.
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