High performance interconnect system for an integrated circuit
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United States of America Patent
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May 26, 1992
Issued Date -
N/A
app pub date -
Nov 8, 1990
filing date -
Aug 14, 1989
priority date (Note) -
Expired
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Abstract
A semiconductor integrated circuit device includes a high performance interconnect structure which comprises a plurality of interconnects, with each interconnect being structurally separated from the remaining interconnects except at electrical contact points. In one embodiment, each interconnect is substantially surrounded by a layer of dielectric material, there being gaps between each adjacent layer of surrounding dielectric material. Another embodiment, a layer of electrically conductive material is formed over the surrounding dielectric layer preferably filling in the gaps between adjacent layers of surrounding dielectric material. The layer of electrically conductive material acts as a ground plane and heat sink.
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