Thermionic emission type static induction transistor and its integrated circuit
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United States of America Patent
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May 26, 1992
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N/A
app pub date -
Jan 24, 1990
filing date -
Jul 26, 1984
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Abstract
In a static induction transistor of thermionic emission type, its gate region is formed of a semiconductor having a forbidden band gap larger than that of a semiconductor forming its channel region, and the distance between a source region and the intrinsic gate region is selected to be smaller than the mean free path of carriers so as to permit the thermionic emission. Such a vertical structure transistor is also applied to an integrated circuit.
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