Photoresists resistant to oxygen plasmas
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United States of America Patent
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May 19, 1992
Issued Date -
N/A
app pub date -
Sep 20, 1990
filing date -
Jun 28, 1988
priority date (Note) -
Expired
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Abstract
The invention is a modified organic photoresist which is resistant to etching in oxygen-containing plasmas and therefore particularly useful for masking and etching organic polymer materials in VLSI and advanced packaging applications. The invention comprises adding a phosphorous-containing compound to a conventional photoresist. The phosphorous-containing compound is of a type and in an amount effective to substantially prevent etching of the modified photoresist in an oxygen-containing plasma without substantially adversely affecting the photosensitivity of the photoresist or the elasticity or the adhesion of the etch resistant film formed during oxygen-containing plasma exposure to an underlying material to be patterned and etched.
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