Semiconductor device having a conductive layer for preventing insulation layer destruction
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United States of America Patent
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-
May 12, 1992
Issued Date -
N/A
app pub date -
Aug 8, 1990
filing date -
Feb 22, 1982
priority date (Note) -
Expired
status (Latency Note)
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Abstract
On a semiconductor substrate between the source region and drain region, there is provided a gate electrode, through an insulation layer. There is further provided a conductive layer partially allowed to electrically contact this gate electrode and covering the region above the side edge portions of the gate electrode so as to mitigate the intensity of an electric field at those side edge portions.
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