Method of making diamond N-type semiconductor diamond p-n junction diode using diphosphorus pentoxide and hot filament CVD method
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United States of America Patent
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May 12, 1992
Grant Date -
N/A
app pub date -
Nov 7, 1990
filing date -
Nov 22, 1989
priority date (Note) -
Expired
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Abstract
A diamond n-type semiconductor including a substrate and a phosphorus element-doped diamond thin film disposed on the substrate. The diamond thin film is deposited by vaporizing a solution comprising a liquid organic compound as the diamond material with diphosphorus pentoxide (P.sub.2 O.sub.5) dissolved therein, and subjecting the resultant gas to a hot filament CVD method.
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